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2SC1472(K)
Silicon NPN Epitaxial, Darlington
REJ03G0688-0200 (Previous ADE-208-1054) Rev.2.00 Aug.10.2005
Application
High gain amplifier
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
3 2 1
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC iC(peak) PC Tj Tstg Ratings 40 30 10 300 500 500 150 -55 to +150 Unit V V V mA mA mW C C
Rev.2.00 Aug 10, 2005 page 1 of 5
2SC1472(K)
Electrical Characteristics
(Ta = 25C)
Item Collector to emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Symbol V(BR)CEO ICBO IEBO hFE1*1 hFE2*1 hFE3*1 Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Turn on time VCE(sat) VBE(sat) fT Cob ton Min 30 -- -- 2000 3000 3000 -- -- 50 -- -- Typ -- -- -- -- -- -- -- -- -- -- 60 Max -- 100 100 100000 -- -- 1.5 2.0 -- 10 -- V V MHz pF ns Unit V nA nA Test conditions IC = 1 mA, RBE = VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 IC = 10 mA, VCE = 5 V IC = 100 mA, VCE = 5 V (Pulse Test) IC = 400 mA, VCE = 5 V (Pulse Test) IC = 100 mA, IB = 0.1 mA IC = 100 mA, IB = 0.1 mA VCE = 5 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCC = 11 V IC = 100 IB1 = 100 mA IB2 = -IB1
Turn off time Storage time Note: hFE1 hFE2 hFE3
toff tstg
-- --
800 350
-- --
ns ns
1. The 2SC1472(K) is grouped by hFE as follows. A B 2000 to 100000 5000 to 100000 3000 min 10000 min 3000 min 10000 min
Switching Time Test Circuit D.U.T. 6k 50 -6 V 6k 0.002 -+ 50 100 0.002 -+ 50 11 V Unit R : C : F 13 V Input 0 Output 0 CRT
Response Waveform
90% 10% 90% 10% td ton tstg toff 90% 10%
P.G. tr, tf 15 ns PW 10 s duty ratio 10%
Rev.2.00 Aug 10, 2005 page 2 of 5
2SC1472(K)
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (mW)
600 500
Typical Output Characteristics
35 30 25
Collector Current IC (mA)
20 8 16 14 1
400
12 10
400
300
8
6 200 4 100 2 A 2.0 4.0
200
PC = 50 0 mW
IB = 0 0 50 100 150 0 6.0 8.0 10
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V) Collector Cutoff Current vs. Collector to Emitter Voltage
Collector Cutoff Current ICEO (nA)
10,000 1,000 75 100 10 1.0 0.1 0.01 0 TC = 25C 100 RBE =
Typical Output Characteristics
200
0 5. 5 4. 0 4.
Collector Current IC (mA)
160
Pulse
3.5
120
3.0
80
2.5
50
2.0
40
1.5 1.0
0.5 A
PC = 500
mW
IB = 0
0
10
20
30
40
50
10
20
30
Collector to Emitter Voltage VCE (V) DC Current Transfer Ratio vs. Collector Current
Collector to Emitter Voltage VCE (V) Collector to Emitter Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage VCE (sat) (V)
1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 1 2 5 10 20 50 100 200 500 Pulse IC = 1,000 IB
Ta = -5 -25 0 25 50 75 100 0C
DC Current Transfer Ratio hFE (x103)
80 70 60
=1 00 5075 C
VCE = 5 V Pulse
50 40 30 20 10 0 2.0
Ta
25 0
-25 -50
5.0 10 20
50 100 200 500
Collector Current IC (mA)
Collector Current IC (mA)
Rev.2.00 Aug 10, 2005 page 3 of 5
2SC1472(K)
Collector to Emitter Saturation Voltage vs. Base Current Base to Emitter Saturation Voltage vs. Collector Current
Collector to Emitter Saturation Voltage VCE (sat) (V)
Base to Emitter Saturation Voltage VBE (sat) (V)
2.4 2.0 1.6 1.2 0.8 0.4 0 1 3 10 30 100 300 1,000 20 50 100 200 IC = 500 mA Ta = 25C Pulse
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 1 2 5 10 20 50 100 200 500 IC = 1,000 IB Pulse
Ta = -50C -25 0 25 50 75 100
Base Current IB (mA)
Collector Current IC (mA)
Collector Output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF)
Input and Output Capacitance vs. Voltage
10
Switching Time vs. Collector Current
30 IC = 100 IB1 = -100 IB2 VCC = 10.5 V
8
Switching Time t (s)
f = 1 MHz
10 3 1.0
toff
6 C (I = 0) ib C 4 Cob(IE = 0)
tstg 0.3 0.1 0.03 0.3 td ton
2
0 0.1
0.3
1.0
3
10
30
1.0
3
10
30
100 300
Collector to Base Voltage VCB (V) Emitter to Base Voltage VEB (V)
Base Current IC (mA)
Response Waveform Switching Time Test Circuit D.U.T. CRT 13 V Input 0 P.G. tr, tf 15 ns PW 10 s duty ratio 10% 50 -6 V 0.002 -+ 50 0.002 -+ 50 Unit R : C : F 10.5 V Output 0 td ton 10% 90% 10% tstg toff 90% 10% 90%
Rev.2.00 Aug 10, 2005 page 4 of 5
2SC1472(K)
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-A
Package Name TO-92(1) / TO-92(1)V
MASS[Typ.] 0.25g
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max
0.55 Max
0.7
0.60 Max
12.7 Min
5.0 0.2
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SC1472KATZ-E 2SC1472KBTZ-E 2500 Quantity Shipping Container Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 5 of 5
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
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